G. Pananakakis: search on Z-Library

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1

Analytical expressions for subthreshold swing in FDSOI MOS structures

Ghibaudo, G., Pananakakis, G.

Journal:

Solid-State Electronics

Year:

2018

Language:

english

File:

PDF, 684 KB

english, 2018

2

Ionizing radiation induced leakage current on ultra-thin gate oxides

Scarpa, A., Paccagnella, A., Montera, F., Ghibaudo, G., Pananakakis, G., Ghidini, G., Fuochi, P.G.

Journal:

IEEE Transactions on Nuclear Science

Year:

1997

Language:

english

File:

PDF, 791 KB

english, 1997

3

Reversibility of charge trapping and SILC creation in thin oxides after stress/anneal cycling

P. Riess, R. Kies, G. Ghibaudo, G. Pananakakis, J. Brini

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 327 KB

english, 1998

4

Accelerated dielectric breakdown and wear out standard testing methods and structures for reliability evaluation of thin oxides

G Ghibaudo, G Pananakakis, R Kies, E Vincent, C Papadas

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 280 KB

english, 1999

5

Measurement and modeling of the annealing kinetics of stress induced leakage current in ultra-thin oxides

P. Riess, G. Ghibaudo, G. Pananakakis, J. Brini

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 271 KB

english, 1999

6

Investigation of charging/discharging phenomena in nano-crystal memories

B. De Salvo, G. Ghibaudo, G. Pananakakis, B. Guillaumot, T. Baron

Journal:

Superlattices and Microstructures

Year:

2000

Language:

english

File:

PDF, 550 KB

english, 2000

7

[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - In-depth Investigation of Hf-based High-k Dielectrics as Storage Layer of Charge-Trap NVMs

Buckley, J., Bocquet, M., Molas, G., Gely, M., Brianceau, P., Rochat, N., Martinez, E., Martin, F., Grampeix, H., Colonna, Jp., Toffoli, A., Vidal, V., Leroux, C., Ghibaudo, G., Pananakakis, G., Bongi

Year:

2006

Language:

english

File:

PDF, 2.49 MB

english, 2006

8

ONO and NO interpoly dielectric conduction mechanisms

B. De Salvo, G. Ghibaudo, G. Pananakakis, G. Reimbold

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 221 KB

english, 1999

9

Wear-out, breakdown occurrence and failure detection in 18–25 Å ultrathin oxides

F. Monsieur, E. Vincent, G. Pananakakis, G. Ghibaudo

Journal:

Microelectronics Reliability

Year:

2001

Language:

english

File:

PDF, 363 KB

english, 2001

10

On the correlation between SILC and hole fluence throughout the oxide

A. Scarpa, B. De Salvo, G. Ghibaudo, G. Pananakakis, A. Paccagnella, G. Ghidini

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 153 KB

english, 1999

11

Capacitance–Voltage (C–V) characterization of 20 Å thick gate oxide: parameter extraction and modeling

R Clerc, T Devoivre, G Ghibaudo, C Caillat, G Guégan, G Reimbold, G Pananakakis

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 186 KB

english, 2000

12

Unified model for breakdown in thin and ultrathin gate oxides (12–5 nm)

Kamoulakos, George, Kelaidis, Christine, Papadas, Constantin, Vincent, Emmanuel, Bruyere, Sylvie, Ghibaudo, Gerard, Pananakakis, Georges, Mortini, Patrick, Ghidini, Gabriella

Journal:

Journal of Applied Physics

Year:

1999

Language:

english

File:

PDF, 423 KB

english, 1999

13

Stress induced degradation features of very thin gate oxides

A Scarpa, G Ghibaudo, G Ghidini, G Pananakakis, A Paccagnella

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 230 KB

english, 1998

14

Modelling of the temperature and electric field dependence of substrate/gate current SILC with an elastic resonant trap assisted tunnelling mechanism

P. iess, G. Ghibaudo, G. Pananakakis

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 304 KB

english, 1999

15

Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4–3 nm)

R. Clerc, A.S. Spinelli, G. Ghibaudo, C. Leroux, G. Pananakakis

Journal:

Microelectronics Reliability

Year:

2001

Language:

english

File:

PDF, 269 KB

english, 2001

16

Characterization of SILO in thin-oxides by using MOSFET substrate current

B. De Salvo, G. Ghibaudo, G. Pananakakis, F. Mondon

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 303 KB

english, 1998

17

Threshold Voltage Model for Short-Channel Undoped Symmetrical Double-Gate MOSFETs

Tsormpatzoglou, A., Dimitriadis, C.A., Clerc, R., Pananakakis, G., Ghibaudo, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 317 KB

english, 2008

18

Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions

F. Monsieur, E. Vincent, D. Roy, S. Bruyere, G. Pananakakis, G. Ghibaudo

Journal:

Microelectronics Reliability

Year:

2001

File:

PDF, 376 KB

2001

19

Electrically and radiation induced leakage currents in thin oxides

A Scarpa, P Riess, G Ghibaudo, A Paccagnella, G Pananakakis, M Ceschia, G Ghidini

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 403 KB

english, 2000

20

Assessment of oxide charge density and centroid from Fowler-Nordheim derivative characteristics in MOS structures after uniform gate stress

R. Kies, T. Egilsson, G. Ghibaudo, G. Pananakakis

Journal:

Microelectronics Reliability

Year:

1996

Language:

english

File:

PDF, 243 KB

english, 1996

21

On the role of holes in oxide breakdown mechanism in inverted nMOSFETs

F Monsieur, E Vincent, V Huard, S Bruyère, D Roy, T Skotnicki, G Pananakakis, G Ghibaudo

Journal:

Microelectronics Reliability

Year:

2003

Language:

english

File:

PDF, 133 KB

english, 2003

22

[IEEE 2001 IEEE International Integrated Reliability Workshop. Final Report - Lake Tahoe, CA, USA (15-18 Oct. 2001)] 2001 IEEE International Integrated Reliability Workshop. Final Report (Cat. No.01TH8580) - Accurate and efficient design of experiment for reliability assessment. Application to a 20 Å gate oxide

Monsieur, F., Vincent, E., Roy, D., Bruyere, S., Pasqualini, F., Pananakakis, G., Ghibaudo, G.

Year:

2001

Language:

english

File:

PDF, 617 KB

english, 2001

23

Reliability issues of offset drain transistors after different modes of static electrical stress

C. Papadas, P. Mortini, C. Monserié, G. Ghibaudo, G. Pananakakis

Journal:

Microelectronics Reliability

Year:

1993

Language:

english

File:

PDF, 610 KB

english, 1993

24

Temperature dependence of the Fowler–Nordheim current in metal-oxide-degenerate semiconductor structures

Pananakakis, G., Ghibaudo, G., Kies, R., Papadas, C.

Journal:

Journal of Applied Physics

Year:

1995

Language:

english

File:

PDF, 985 KB

english, 1995

25

Méthode d’étude expérimentale des champs dans les résonateurs électromagnétiques: application aux résonateurs hélicoïdaux

Georges Pananakakis, Floréal Gabalda, Georges Boudouris

Journal:

annals of telecommunications - annales des télécommunications

Year:

1973

File:

PDF, 1.19 MB

1973

26

Emerging oxide degradation mechanisms: Stress induced leakage current (SILC) and quasi-breakdown (QB)

G. Ghibaudo, P. Riess, S. Bruyère, B. DeSalvo, C. Jahan, A. Scarpa, G. Pananakakis, E. Vincent

Journal:

Microelectronic Engineering

Year:

1999

Language:

english

File:

PDF, 751 KB

english, 1999

27

On the cumulative distribution function of the defect centric model for BTI reliability

Nouguier, D., Pananakakis, G., Federspiel, X., Rafik, M., Roy, D., Ghibaudo, G.

Journal:

Microelectronics Reliability

Year:

2019

File:

PDF, 956 KB

2019

28

Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices

De Salvo, B., Ghibaudo, G., Pananakakis, G., Masson, P., Baron, T., Buffet, N., Fernandes, A., Guillaumot, B.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 284 KB

english, 2001

29

Impact of a HTO/Al2O3 bi-layer blocking oxide in nitride-trap non-volatile memories

M. Bocquet, G. Molas, L. Perniola, X. Garros, J. Buckley, M. Gély, J.P. Colonna, H. Grampeix, F. Martin, V. Vidal, A. Toffoli, S. Deleonibus, G. Ghibaudo, G. Pananakakis, B. De Salvo

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 782 KB

english, 2009

30

Impact of source-to-drain tunnelling on the scalability of arbitrary oriented alternative channel material nMOSFETs

Quentin Rafhay, Raphaël Clerc, Gérard Ghibaudo, Georges Pananakakis

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 399 KB

english, 2008

31

On the accuracy of current TCAD hot carrier injection models in nanoscale devices

Alban Zaka, Quentin Rafhay, Matteo Iellina, Pierpaolo Palestri, Raphaël Clerc, Denis Rideau, Davide Garetto, Erwan Dornel, Julien Singer, Georges Pananakakis, Clément Tavernier, Hervé Jaouen

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 728 KB

english, 2010

32

Analytical threshold voltage model for lightly doped short-channel tri-gate MOSFETs

A. Tsormpatzoglou, D.H. Tassis, C.A. Dimitriadis, G. Ghibaudo, N. Collaert, G. Pananakakis

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 348 KB

english, 2011

33

Gate oxide Reliability assessment optimization

F. Monsieur, E. Vincent, D. Roy, S. Bruyère, G. Pananakakis, G. Ghibaudo

Journal:

Microelectronics Reliability

Year:

2002

File:

PDF, 753 KB

2002

34

[IEEE 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - Enschede, The Netherlands (8-11 October 1996)] Proceedings of the 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - Assessment of oxide charge density and centroid from fowler-nordheim derivative characteristics in MOS structures after uniform gate stress

Kies, R., Egilsson, T., Ghibaudo, G., Pananakakis, G.

Year:

1996

Language:

english

File:

PDF, 250 KB

english, 1996

35

Semi-Analytical Modeling of Short-Channel Effects in Si and Ge Symmetrical Double-Gate MOSFETs

Tsormpatzoglou, A., Dimitriadis, C.A., Clerc, R., Rafhay, Q., Pananakakis, G., Ghibaudo, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 299 KB

english, 2007

36

Bardeen's approach for tunneling evaluation in MOS structures

R. Clerc, G. Ghibaudo, G. Pananakakis

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 186 KB

english, 2002

37

A New Degradation Mode for Heterojunction Bipolar Transistors Under Reverse-Bias Stress

Ruat, M., Angers, R., Pakfar, A., Ghibaudo, G., Chantre, A., Revil, N., Pananakakis, G.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2006

Language:

english

File:

PDF, 1.36 MB

english, 2006

38

[IEEE 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - Enschede, The Netherlands (8-11 October 1996)] Proceedings of the 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - Influence of parasitic structures on the ESD performance of a pure bipolar process

Nikolaidis, T., Richier, C., Reffay, M., Mortini, P., Pananakakis, G.

Year:

1996

Language:

english

File:

PDF, 310 KB

english, 1996

39

Influence of parasitic structures on the ESD performance of a pure bipolar process

T. Nikolaïdis, C. Richier, M. Reffay, P. Mortini, G. Pananakakis

Journal:

Microelectronics Reliability

Year:

1996

Language:

english

File:

PDF, 297 KB

english, 1996

40

Reliability issues of silicon-dioxide structures—Application to FLOTOX EEPROM cells

C. Papadas, G. Ghibaudo, C. Monserié, G. Pananakakis

Journal:

Microelectronics Reliability

Year:

1993

Language:

english

File:

PDF, 1.77 MB

english, 1993

41

Efficient charge control model for pseudomorphic and strained high electron mobility transistors on GaAs and InP substrates

G. Halkias, A. Vegiri, G. Pananakakis, A. Christou

Journal:

Solid-State Electronics

Year:

1992

Language:

english

File:

PDF, 472 KB

english, 1992

42

Complete determination of the electrical interfacial parameters in Al-SiO2 (30 Å)-Si tunnel diodes using I–V, C–V, G–V measurements

G. Pananakakis, G. Kamarinos

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 48 KB

english, 1986

43

Evaluation of HfAlO high-k materials for control dielectric applications in non-volatile memories

G. Molas, M. Bocquet, J. Buckley, H. Grampeix, M. Gély, J.P. Colonna, F. Martin, P. Brianceau, V. Vidal, C. Bongiorno, S. Lombardo, G. Pananakakis, G. Ghibaudo, B. De Salvo, S. Deleonibus

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 333 KB

english, 2008

44

On the degradation kinetics of thin oxide layers

A. Scarpa, G. Pananakakis, G. Ghibaudo, A. Paccagnella, G. Ghidini

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 301 KB

english, 1999

45

New method for the extraction of the coupling ratios in FLOTOX EEPROM cells

Moison, B., Papadas, C., Ghibaudo, G., Mortini, P., Pananakakis, G.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 329 KB

english, 1993

46

[IEEE 2013 14th International Conference on Ultimate Integration on Silicon (ULIS 2013) - Coventry (2013.3.19-2013.3.21)] 2013 14th International Conference on Ultimate Integration on Silicon (ULIS) - Modeling of the impact of source/drain regions on short channel effects in MOSFETs

Dutta, T., Rafhay, Q., Pananakakis, G., Ghibaudo, G.

Year:

2013

Language:

english

File:

PDF, 1.14 MB

english, 2013

47

Oxide reliability criterion for the evaluation of the endurance performance of electrically erasable programmable read only memories

Papadas, C., Ghibaudo, G., Pananakakis, G., Riva, C., Mortini, P.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 803 KB

english, 1992

48

[IEEE 2006 IEEE International Integrated Reliability Workshop Final Report - South Lake Tahoe, CA, USA (2006.10.16-2006.09.19)] 2006 IEEE International Integrated Reliability Workshop Final Report - Reliability Characteristics of a 150GHZ fT/fmax Si/SiGeC Heterojunction Bipolar Transistor Under Reverse, Forward and Mixed-Mode Stress

Ruat, M., Bourgeat, J., Marin, M., Ghibaudo, G., Revil, N., Pananakakis, G.

Year:

2006

Language:

english

File:

PDF, 361 KB

english, 2006

49

[IEEE 2002 IEEE International Reliability Physics Symposium Proceedings. 40th Annual - Dallas, TX, USA (7-11 April 2002)] 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) - A thorough investigation of progressive breakdown in ultra-thin oxides. Physical understanding and application for industrial reliability assessment

Monsieur, F., Vincent, E., Roy, D., Bruyere, S., Vildeuil, J.C., Pananakakis, G., Ghibaudo, G.

Year:

2002

Language:

english

File:

PDF, 722 KB

english, 2002

50

Extraction of interface state density profile from the maximums of the parallel conductance versus applied gate bias curves Gp(Va), using the conductance technique

Papadas, C., Morfouli, P., Ghibaudo, G., Pananakakis, G.

Journal:

Review of Scientific Instruments

Year:

1992

Language:

english

File:

PDF, 577 KB

english, 1992

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